Oxide Nanoelectronics Technology | Research Capability & Technology Portfolio

Oxide nano-electronic materials promise dramatic improvements in the performance and lifespan of electronic devices. Due to these superior properties, the materials have been implemented in radiation-hardened circuits for space applications, in an array of sensors and actuators, and within next-generation electronics such as ferroelectric memory.

Competitive advantage

Pioneering research into conducting materials with nanoscale topological features
Key skills in design of materials with sub-nanometer ion channels
Advanced scanning probe microscopy including instrument development
Demonstrated first domain wall electronics elements
A leading publication and IP profile within this critical research field
As a member of the Australian Research Centre (ARC) Centre of Excellence in future low-energy electronics technologies, this group has access to state-of-the-art nanoelectronics characterisation equipment.

Impact

Potential use in reconfigurable electronics, ultralow energy technology, domain wall memory, radiation detectors, sub-nanometer ion channels, and radiation hardened electronics

Successful applications

Domain wall memory, utilising magnetic oxides is approaching commercial implementation, team holds key IP in the field
Characterisation of bespoke circuits for critical hardened electronics applications

Capabilities and facilities

Specialised tools and expertise in materials synthesis using ultra-high vacuum technology and pulsed laser deposition
State-of-the art scanning probe microscopy material characterisation techniques

Our partners

US Office of Naval Research
Intel Corporation
Australian semiconductor manufacturers (Silanna, among others)